The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC681ARD
View detailed images (13)

2SC681ARD

SKU: 2SC681ARD
2SC681ARD Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Datasheet
2SC681ARD Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CEO 80
Max. PD (W) 50
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 543629
Back