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2SC833
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2SC833

SKU: 2SC833
2SC833 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Toshiba
Vbr CBO 450
Vbr CEO 300
Max. PD (W) 25
t(f) Max. (S) 3.0u+
Max. hFE 80
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 2.0u
R(sat) (Û) 1.2
Derate Above 25°C 200m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 450 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 762467
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