2SC999A

SKU: 2SC999A

2SC999A Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SC999
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	1.5k
Vbr CEO	650
Max. PD (W)	50
Max. hFE	60
Min hFE	15
Ic Max. (A)	2.5
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	2.5
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	140
@VCE (V)	15
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	650 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	585397

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