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2SD100
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2SD100

SKU: 2SD100
2SD100 Transistor Germanium NPN CASE: TO1 MAKE: Toshiba
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer Toshiba
Vbr CBO 32
Vbr CEO 32
Max. PD (W) 250m
hfe 75
Ic Max. (A) 400m
Polarity NPN
@VCE (test) (V) 1.0
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 762269
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