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2SD1009
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2SD1009

SKU: 2SD1009
2SD1009 Transistor Silicon NPN CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SD1009 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 1.0
Max. hFE 450
Ic Max. (A) 50m
@Ic (test) (A) 10m
Polarity NPN
Trans. Freq (Hz) Min. 160M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 345307
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