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2SD102
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2SD102

SKU: 2SD102
2SD102 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba
Datasheet
2SD102 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 25
Max. hFE 300
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 1.5M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 345310
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