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2SD1101
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2SD1101

SKU: 2SD1101
2SD1101 Transistor Silicon NPN CASE: TO236 MAKE: Hitachi
Datasheet
2SD1101 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer Hitachi
Vbr CEO 20
Max. PD (W) 150m
hfe 85
Ic Max. (A) 700m
Polarity NPN
Trans. Freq (Hz) Min. 280M
@VCE (test) (V) 1.0
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 140
SKU 345330
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