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2SD1105
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2SD1105

SKU: 2SD1105
2SD1105 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Datasheet
2SD1105 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 200
Max. hFE 120
Min hFE 40
Ic Max. (A) 15
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
Derate Above 25°C 1.6
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 550643
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