The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1119
View detailed images (12)

2SD1119

SKU: 2SD1119
2SD1119 Transistor Silicon NPN CASE: SOT89 MAKE: Matsushita Electronics
Datasheet
2SD1119 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 25
Max. PD (W) 1.0
Max. hFE 600
Min hFE 180
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 8.0m
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 150
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 260
SMD Transistor Code TQ_TR
SKU 345338
Back