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2SD1132
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2SD1132

SKU: 2SD1132
2SD1132 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi
Datasheet
2SD1132 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Hitachi
Vbr CEO 60
Max. PD (W) 40
Max. hFE 320
Min hFE 60
Ic Max. (A) 4.0
@Ic (test) (A) 1.0
Polarity NPN
Trans. Freq (Hz) Min. 8.0M
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 115396
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