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2SD1151
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2SD1151

SKU: 2SD1151
2SD1151 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CEO 1.5k
Max. PD (W) 95
Max. hFE 150
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 3.5
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 780m
@VCE (test) 10
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 95 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 550647
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