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2SD1165
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2SD1165

SKU: 2SD1165
2SD1165 Transistor Silicon NPN CASE: Standard MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer Toshiba
Vbr CEO 900
Max. PD (W) 1.2k
t(f) Max. (S) 5.0u
Min hFE 60
Ic Max. (A) 100
@Ic (test) (A) 100
Icbo Max. @Vcb Max. (A) 2.0m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 2.0u
R(sat) (Û) 25m
t(stor) Max. (S) 25u
Derate Above 25°C 12
Trans. Freq (Hz) Min. 100k
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1250 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 900 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 100 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 762063
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