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2SD1177B
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2SD1177B

SKU: 2SD1177B
2SD1177B Transistor Silicon NPN CASE: SOT32 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 20
Max. hFE 120
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C .16
Trans. Freq (Hz) Min. 230M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 230 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 543474
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