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2SD1185
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2SD1185

SKU: 2SD1185
2SD1185 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Datasheet
2SD1185 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 1.2k
Vbr CEO 800
Max. PD (W) 50
t(f) Max. (S) 1.0u
Max. hFE 30
Min hFE 10
Ic Max. (A) 5.0
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Derate Above 25°C .40
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1200 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 20585
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