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2SD12
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2SD12

SKU: 2SD12
2SD12 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 75
Vbr CEO 40
Max. PD (W) 60
Max. hFE 75
Min hFE 25
Ic Max. (A) 2.5
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
R(sat) (Û) 800m
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 2.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 549505
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