2SD1220Y

SKU: 2SD1220Y

2SD1220Y Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SD1220
Type	Transistor Silicon NPN
Case	SOT533
Manufacturer	Toshiba
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	1.0
Max. hFE	320
Min hFE	160
Ic Max. (A)	1.5
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	8.0m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	160
SKU	586149

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