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2SD1224
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2SD1224

SKU: 2SD1224
2SD1224 Transistor Silicon NPN CASE: SOT533 MAKE: Toshiba
Datasheet
2SD1224 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT533
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 1.0
t(f) Max. (S) .30u
Min hFE 4.0k
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 8.0m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 6000
SKU 345367
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