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2SD1250
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2SD1250

SKU: 2SD1250
2SD1250 Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SD1250 Datasheet
Product specifications
Equivalent 2SD1250A
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 30
Max. hFE 240
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 240m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 345382
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