The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1250A
View detailed images (12)

2SD1250A

SKU: 2SD1250A
2SD1250A Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics
Datasheet
2SD1250A Datasheet
Product specifications
Equivalent 2SD1250
Type Transistor Silicon NPN
Case TO262
Manufacturer Matsushita Electronics
Vbr CBO 200
Vbr CEO 180
Max. PD (W) 30
Max. hFE 240
Min hFE 60
Ic Max. (A) 2.0
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 240m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 80
SKU 345383
Back