2SD1252

SKU: 2SD1252

2SD1252 Transistor Silicon NPN CASE: TO262 MAKE: Matsushita Electronics

Datasheet

2SD1252 Datasheet

Product specifications

Weight	0.01 kg
Equivalent	2SD1252A
Type	Transistor Silicon NPN
Case	TO262
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	35
Max. hFE	250
Min hFE	40
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Tr Max. (s)	2.5u
Derate Above 25°C	280m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	80
SKU	345385

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