The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD129
View detailed images (12)

2SD129

SKU: 2SD129
2SD129 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Toshiba
Vbr CBO 90
Vbr CEO 80
Max. PD (W) 25
Max. hFE 200
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 200m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584729
Back