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2SD1369
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2SD1369

SKU: 2SD1369
2SD1369 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 20
Min hFE 2.0k
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
Tr Max. (s) 100n
Derate Above 25°C 160m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 4000
SKU 761764
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