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2SD1518
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2SD1518

SKU: 2SD1518
2SD1518 Transistor Silicon NPN CASE: TO3P MAKE: Toshiba
Datasheet
2SD1518 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3P
Manufacturer Toshiba
Vbr CBO 900
Vbr CEO 400
Max. PD (W) 50
t(f) Max. (S) .50u
Min hFE 8.0
Ic Max. (A) 6.0
@Ic (test) (A) 10m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C .40
Trans. Freq (Hz) Min. 5.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 75 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 345505
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