The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1519
View detailed images (13)

2SD1519

SKU: 2SD1519
2SD1519 Transistor Silicon NPN CASE: TO126 MAKE: Toshiba
Datasheet
2SD1519 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Toshiba
Vbr CBO 1.4k
Vbr CEO 600
Max. PD (W) 80
t(f) Max. (S) 1.0u
Min hFE 8.0
Ic Max. (A) 10
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C .64
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 1400 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15
SKU 345506
Back