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2SD157
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2SD157

SKU: 2SD157
2SD157 Transistor Silicon NPN CASE: TO66 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Fujitsu
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 4.0
Max. hFE 250
Min hFE 20
Ic Max. (A) 100m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
R(sat) (Û) 100
Derate Above 25°C 50m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 761613
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