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2SD1606
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2SD1606

SKU: 2SD1606
2SD1606 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi
Datasheet
2SD1606 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Hitachi
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 40
t(f) Max. (S) 2.0u-+
Max. hFE 20k
Min hFE 1k
Ic Max. (A) 6.0
@Ic (test) (A) 0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 0.6u-
Oper. Temp (°C) Max. 140
@VCE (V) 120i
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 15000
SKU 345545
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