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2SD170A
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2SD170A

SKU: 2SD170A
2SD170A Transistor Germanium NPN CASE: TO1 MAKE: Hitachi
Product specifications
Equivalent 2SD170
Type Transistor Germanium NPN
Case TO1
Manufacturer Hitachi
Vbr CBO 32
Vbr CEO 25
Max. PD (W) 600m
Derate (Amb) (W/°C) 10m
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 100
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 543125
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