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2SD183
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2SD183

SKU: 2SD183
2SD183 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO8
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 55
Max. PD (W) 10
Max. hFE 120
Min hFE 15
Ic Max. (A) 1.0
@Ic (test) (A) 750m
Icbo Max. @Vcb Max. (A) 15u
Polarity NPN
Derate Above 25°C 66m
Trans. Freq (Hz) Min. 1.5M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 761270
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