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2SD1918
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2SD1918

SKU: 2SD1918
2SD1918 Transistor Silicon NPN CASE: TO218 MAKE: Rohm Semiconductor
Datasheet
2SD1918 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Rohm Semiconductor
Vbr CEO 160
Max. PD (W) 10
Max. hFE 270
Min hFE 56
Ic Max. (A) 1.5
@Ic (test) (A) 100m
Polarity NPN
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 345712
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