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2SD1964
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2SD1964

SKU: 2SD1964
2SD1964 Transistor Silicon NPN CASE: SOT186 MAKE: Matsushita Electronics
Datasheet
2SD1964 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Matsushita Electronics
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 1.3
t(f) Max. (S) 2.0u
Max. hFE 3.2k
Min hFE 800
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 2.0u
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 345731
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