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2SD2118
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2SD2118

SKU: 2SD2118
2SD2118 Transistor Silicon NPN CASE: TO252 MAKE: Rohm Semiconductor
Datasheet
2SD2118 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Rohm Semiconductor
Vbr CEO 20
Max. PD (W) 10
Max. hFE 560
Min hFE 120
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Polarity NPN
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 345810
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