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2SD2150
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2SD2150

SKU: 2SD2150
2SD2150 Transistor Silicon NPN CASE: SOT89 MAKE: Rohm Semiconductor
Datasheet
2SD2150 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Rohm Semiconductor
Vbr CEO 20
Max. PD (W) 2.0
Max. hFE 560
Min hFE 120
Ic Max. (A) 3.0
@Ic (test) (A) 100m
Polarity NPN
@VCE (V) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 290 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SKU 345836
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