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2SD2176
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2SD2176

SKU: 2SD2176
2SD2176 Transistor Silicon NPN Darlington + Diode CASE: SOT89 MAKE: Sanyo Semiconductor
Datasheet
2SD2176 Datasheet
Product specifications
Type Transistor Silicon NPN Darlington + Diode
Case SOT89
Manufacturer Sanyo Semiconductor
Vbr CEO 50
Max. PD (W) 1.3
Max. hFE 20.0k
Min hFE 1.0k
Ic Max. (A) 1.2
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 10m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 1000
SMD Transistor Code DQ
SKU 345849
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