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2SD2212
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2SD2212

SKU: 2SD2212
2SD2212 Transistor Silicon NPN Darlington + Diode CASE: SOT89 MAKE: Rohm Semiconductor
Datasheet
2SD2212 Datasheet
Product specifications
Type Transistor Silicon NPN Darlington + Diode
Case SOT89
Manufacturer Rohm Semiconductor
Vbr CEO 60
Max. PD (W) 2
Max. hFE 10k
Min hFE 1k
Ic Max. (A) 2
@Ic (test) (A) 1
Mat. Silicon Logic
Polarity NPN
@VCE (test) 2
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SMD Transistor Code DR
SKU 345875
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