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2SD2233
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2SD2233

SKU: 2SD2233
2SD2233 Transistor Silicon NPN CASE: SOT186 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Matsushita Electronics
Vbr CBO 200
Vbr CEO 60
Max. PD (W) 40
Min hFE 20
Ic Max. (A) 4.0
@Ic (test) (A) 4.0
Polarity NPN
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 4000
SKU 550705
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