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2SD246
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2SD246

SKU: 2SD246
2SD246 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Vbr CEO 1.5k
Max. PD (W) 16
t(f) Max. (S) 1.3u
Min hFE 2.0
Ic Max. (A) 4.5
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 2.2
Derate Above 25°C 177m
Oper. Temp (°C) Max. 125
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 115 °C
Forward Current Transfer Ratio (hFE), MIN 2
SKU 549823
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