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2SD251
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2SD251

SKU: 2SD251
2SD251 Transistor Silicon NPN CASE: TO66 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Fujitsu
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 30
t(f) Max. (S) 3.0u-
Min hFE 100-
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Tr Max. (s) 2.5u-
R(sat) (Û) 2.0
Derate Above 25°C 200m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 540209
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