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2SD35
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2SD35

SKU: 2SD35
2SD35 Transistor Germanium NPN CASE: U8 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium NPN
Case U8
Manufacturer Matsushita Electronics
Vbr CBO 20
Max. PD (W) 83m
Derate (Amb) (W/°C) 1.6m
hfe 108=
Ic Max. (A) 60m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 75
@Ic (A) 250u
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.085 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.06 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 760444
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