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2SD363
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2SD363

SKU: 2SD363
2SD363 Transistor Silicon NPN CASE: TO3 MAKE: NEC
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer NEC
Vbr CBO 250
Vbr CEO 200
Max. PD (W) 200
Max. hFE 100
Min hFE 15
Ic Max. (A) 30
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 300n
R(sat) (Û) 100m
Derate Above 25°C 1.3
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 85767
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