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2SD367
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2SD367

SKU: 2SD367
2SD367 Transistor Germanium NPN CASE: TO1 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium NPN
Case TO1
Manufacturer Matsushita Electronics
Vbr CBO 25
Max. PD (W) 150m
Derate (Amb) (W/°C) 3.0m
hfe 46
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
Trans. Freq (Hz) Min. 30k
@VCE (test) (V) 0.5
Oper. Temp (°C) Max. 100
@Ic (A) 150m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 85 °C
Forward Current Transfer Ratio (hFE), MIN 46
SKU 115438
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