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2SD413
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2SD413

SKU: 2SD413
2SD413 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 800m
C(ob) (F) 12p
Derate (Amb) (W/°C) 5.3m
hfe 65
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity NPN
Trans. Freq (Hz) Min. 25M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 200m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 24 pF
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 540211
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