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2SD517
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2SD517

SKU: 2SD517
2SD517 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.5k
Vbr CEO 700
Max. PD (W) 16
t(f) Max. (S) 1.1u
Max. hFE 10
Min hFE 3.0
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 400m
Oper. Temp (°C) Max. 135
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 16 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 130 °C
Forward Current Transfer Ratio (hFE), MIN 3
SKU 115441
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