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2SD520
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2SD520

SKU: 2SD520
2SD520 Transistor - Case: TO3 Make: Mitsubishi
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CEO 400
Max. PD (W) 100
Max. hFE 1.5k
Min hFE 200
Ic Max. (A) 7.0
@Ic (test) (A) 4.5
Icbo Max. @Vcb Max. (A) 500u
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 250m
Derate Above 25°C 800m
@VCE (test) 2.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 350
SKU 552041
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