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2SD539
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2SD539

SKU: 2SD539
2SD539 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Equivalent 2SD539A
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 400
Vbr CEO 350
Max. PD (W) 100
t(f) Max. (S) 1.5u
Max. hFE 70
Min hFE 8.0
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Tr Max. (s) 2.0u
R(sat) (Û) 300m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 13 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 540221
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