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2SD539A
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2SD539A

SKU: 2SD539A
2SD539A Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Equivalent 2SD539
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 400
Vbr CEO 350
Max. PD (W) 150
t(f) Max. (S) 1.5u
Max. hFE 70
Min hFE 20
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 2.0u
R(sat) (Û) 200m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 15
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 13 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 540407
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