2SD539A

SKU: 2SD539A

2SD539A Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Equivalent	2SD539
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	400
Vbr CEO	350
Max. PD (W)	150
t(f) Max. (S)	1.5u
Max. hFE	70
Min hFE	20
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Tr Max. (s)	2.0u
R(sat) (Û)	200m
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	15
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	400 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	13 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	540407

Back