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2SD546
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2SD546

SKU: 2SD546
2SD546 Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Matsushita Electronics
Vbr CBO 800
Vbr CEO 500
Max. PD (W) 30
Max. hFE 200
Min hFE 40
Ic Max. (A) 1.0
@Ic (test) (A) 20m
Icbo Max. @Vcb Max. (A) 300u
Polarity NPN
R(sat) (Û) 6.0
Derate Above 25°C 240m
Trans. Freq (Hz) Min. 7.0M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 800 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 549832
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