2SD55

SKU: 2SD55

2SD55 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SD55A
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	55
Max. PD (W)	200
Max. hFE	48
Min hFE	12
Ic Max. (A)	20
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
Derate Above 25°C	1.6
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	55 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	584253

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