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Home / Actives / Transistor / 2SD55A
2SD55A
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2SD55A

SKU: 2SD55A
2SD55A Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SD55
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 130
Vbr CEO 110
Max. PD (W) 200
Max. hFE 48
Min hFE 12
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Derate Above 25°C 620m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 584738
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