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2SD55
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2SD55

SKU: 2SD55
2SD55 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SD55A
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 100
Vbr CEO 55
Max. PD (W) 200
Max. hFE 48
Min hFE 12
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
Derate Above 25°C 1.6
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 584253
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